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A novel kinetic Monte Carlo method for epitaxial growth

R. DEÁK1,2, Z. NÉDA2,* , P. B. BARNA3

Affiliation

  1. Eötvös Loránd University, Department of Materials Science, Budapest, Hungary
  2. Babeş-Bolyai University, Department of Theoretical and Computational Physics, Cluj-Napoca, RO-400084, Romania
  3. Research Institute for Technical Physics and Materials Science, H-1525, Budapest, P.O box 49, Hungary

Abstract

A fast and realistic kinetic Monte Carlo method, aimed to reproduce pattern formation mechanism in epitaxial growth is presented. By several simple examples the applicability of the method is illustrated: dynamics and statistics of island growth and coalescence, impurity segregation and stacking fault dynamics. The method offers new perspectives for simulating hetero-epitaxial growth and the formation of several deposited layers in reasonable computational time, using normal PC type computers..

Keywords

Epitaxial growth, Kinetic Monte Carlo, Pattern formation, Monolayer formation, Coalescence.

Submitted at: Feb. 16, 2008
Accepted at: Aug. 28, 2008

Citation

R. DEÁK, Z. NÉDA, P. B. BARNA, A novel kinetic Monte Carlo method for epitaxial growth, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 9, pp. 2445-2450 (2008)