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A programmable metallization cell based on Ag-As2S3

I. STRATAN1, D. TSIULYANU1,* , I. EISELE2

Affiliation

  1. Technical University, Chisinau, MD-2060, Moldova
  2. University of Bundeswehr Munich, DE-85577 Neubiberg 85577, Germany

Abstract

The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off state resistance to an on resistance state which is more than two orders of magnitude lower. To bring the structure back in an off state, a reverse bias of several volts is required. The frequency dependence of the switching threshold was carried out. Also is found that time required to switch the structure in a stabile on state is less than 10 µsec and around 60 µsec of reverse bias is required to put the structure back in an off state. The threshold voltage is shown to be nearly independent on temperature, but a linear increase of the on state resistance is observed within 20-80 oC. The results are interpreted in terms of an electronic – superionic transition in chalcogenide glassy semiconductors due to a high concentration of dissolved metal..

Keywords

Chalcogenides, Memory switching, Solid electrolytes, Ag-As2S3, Programmable metallization cell.

Submitted at: Oct. 27, 2006
Accepted at: Nov. 2, 2006

Citation

I. STRATAN, D. TSIULYANU, I. EISELE, A programmable metallization cell based on Ag-As2S3, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2117-2119 (2006)