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A study of field dependent steady-state photocarrier grating measurements for microcrystalline semiconductors using different theoretical methods

R. I. BADRAN1,*

Affiliation

  1. Physics Department, King Abdulaziz University, Jeddah, Saudi Arabia

Abstract

The study of field dependent steady-state photocarrier grating (SSPG) measurements has been performed on microcrystalline samples prepared by hot-wire chemical vapor deposition (HWCVD) technique. The field-dependent experimental data at room temperature are analyzed using different approaches based on the small-signal photocurrent to extract more information on the electronic properties (like drift mobility for electrons and holes, small signal mobility life time product, average drift length for holes and electrons,… etc.). The quality of the fits has been tested by χ2 indicator and the best choice of the transport parameters has been extracted due to each adopted approach. The trapped charge density can be correlated to minority-carrier mobility-lifetime product or diffusion length which is, in turn, may be related to sub-gap absorption..

Keywords

Amorphous semiconductors; glasses, Electronic transport phenomena in thin films, Charge carriers: generation, recombination, lifetime, trapping, mean free paths, Photoconduction and photovoltaic effects.

Submitted at: Oct. 3, 2007
Accepted at: Jan. 18, 2008

Citation

R. I. BADRAN, A study of field dependent steady-state photocarrier grating measurements for microcrystalline semiconductors using different theoretical methods, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 1, pp. 174-184 (2008)