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AC conductivity in a-GeSePb glassy alloys

GURINDER SINGH1, N. GOYAL1, G. S. S. SAINI1, S. K. TRIPATHI1,*

Affiliation

  1. Department of Physics, Center of Advance Study in Physics, Panjab University, Chandigarh- 160 014 India

Abstract

The present paper reports the effect of Pb impurity (low ~ 2 at. % and high ~ 10 at. %) on the ac conductivity (σac) of a-Ge20Se80 glassy alloy. Frequency dependent ac conductance and capacitance of the samples over a frequency range of 100 Hz - 50 kHz has been taken at different temperatures. At frequency 2 kHz and temperature 298 K, the value of σac increases at low as well as at higher concentration of Pb. σac is proportional to ωs for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes after the Pb addition..

Keywords

Ge-Se-Pb, Chalcogenides, Hopping conduction, Defect states.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

GURINDER SINGH, N. GOYAL, G. S. S. SAINI, S. K. TRIPATHI, AC conductivity in a-GeSePb glassy alloys, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3044-3048 (2007)