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Admittance study of MIS structures with pulsed laser deposited AlN films

S. SIMEONOV1, S. BAKALOVA1,* , E. KAFEDJIISKA1, A. SZEKERES1, G. SOCOL2, S. GRIGORESCU2, I. N. MIHAILESCU2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele, Romania

Abstract

MIS structures of Al/AlN/Si have been studied by applying frequency-dependent admittance measurements at zero bias voltage. Thus, the dependence of the capacitance on the test voltage frequency has established the existence of regions of constant capacitance, where the interface and bulk electron traps do not influence the capacitance measurements. Additionally, the contributions of the hopping mechanism of charge transport and the inter-trap tunnelling have been evaluated from the alternating current conductance dispersion..

Keywords

Aluminium nitride, Dielectric properties, AC conductivity mechanism.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

S. SIMEONOV, S. BAKALOVA, E. KAFEDJIISKA, A. SZEKERES, G. SOCOL, S. GRIGORESCU, I. N. MIHAILESCU, Admittance study of MIS structures with pulsed laser deposited AlN films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 323-325 (2007)