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AlN thin film deposition using a radio-frequency beam assisted pulsed laser deposition

M. OSIAC1,* , N. SCARISOREANU2, M. DINESCU2

Affiliation

  1. Faculty of Physics, University of Craiova, 200585, Craiova, Romania
  2. National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO- 77125 Magurele, Bucharest, Romania

Abstract

Aluminium nitride is one of the compounds intensively studied because of its attractive properties: large direct bang-gap, large thermal conductivity, high acoustic velocity, high melting point, high Knoop hardness, low dielectric loss. Pulsed laser deposition was found to be a very attractive technique for obtaining films with desired properties for different applications: AlN layers can be obtained by ablation of a pure Al target in reactive atmosphere containing nitrogen and argon. The influence of the deposition parameters (gas pressure, laser fluence, Radio Frequency power) on the structure and morphology of the deposited layers was studied. Laser plasma and RF beam were characterised by optical emission spectroscopy: a correlation between the species concentration and film composition was done..

Keywords

RF assited PLD, Thin film.

Submitted at: March 1, 2008
Accepted at: July 10, 2008

Citation

M. OSIAC, N. SCARISOREANU, M. DINESCU, AlN thin film deposition using a radio-frequency beam assisted pulsed laser deposition, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 8, pp. 2068-2070 (2008)