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Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline

M. SCHUSZTER1, L. DOBOS2, K. A. DEMCU1, SZ. NAGY3, I. MOJZES1,*

Affiliation

  1. Dept. of Electronics Technology, Budapest University of Technology and Economics, Budapest H-1521, Hungary
  2. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49 Budapest H-1525, Hungary
  3. Department of Telecommunications, Jedlik Ányos Institute of Informatics, Electrical and Mechanical Engineering, Széchenyi István University, H-9026 Győr, Egyetem tér 1, Hungary

Abstract

Heat treatment of metallized compound semiconductors results in generation of Ohmic contacts. The morphology changes of the surface during the thermal treatment can be observed by scanning electron microscope. According to our previous results these patterns show fractal character. The fractal dimension of a self-similar object can be calculated using the toolbox of fast wavelet-transform. A method is presented for analyzing the electron microscopic images of the heat treated samples by a fast wavelet-transform based algorithm using the filter coefficients of the two dimensional B-Spline functions. A connection between the dimension values of the patterns and the temperatures of the heat treating are shown..

Keywords

Compound semiconductor, Ohmic contact, Fractal.

Submitted at: June 19, 2007
Accepted at: July 15, 2007

Citation

M. SCHUSZTER, L. DOBOS, K. A. DEMCU, SZ. NAGY, I. MOJZES, Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 2241-2244 (2007)