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Antiferroelectric-like behavior in polycrystalline Pb(Zr0.2Ti0.8)O3-BiFeO3 multilayers prepared by sol-gel method

L. PINTILIE1,* , V. STANCU1, C. DRAGOI1, M. VLAICU1

Affiliation

  1. National Institute of Materials Physics, P.O. Box MG-7, Magurele, 077125 Romania

Abstract

Pb(Zr0.2Ti0.8)O3-BiFeO3 (PZT-BFO) multilayer structures were realized by sol-gel on Pt/Si substrate and their electrical properties were investigated using top Pt, Au and Cu electrodes. All multilayers start and end with PZT films. The polarization-voltage and current-voltage hysteresis loops resemble to those encountered in case of antiferroelectric (AFE) films, although component materials are both ferroelectric (FE). The AFE-like behavior is more clearly visible in the case of three-layer structures of PZT-BFO-PZT type, and it is not dependent of the metal used as top electrode. After fatigue cycling the polarization hysteresis apparently changes from characteristic AFE double-loop to FE single loop, although the four switching current peaks characteristic for an AFE behavior are still present in the current hysteresis. These results suggest the presence of an AFE interfacial coupling between the PZT and BFO layers..

Keywords

Antiferroelectric, Multiferroic, Double loop, Interfaces.

Submitted at: Oct. 3, 2008
Accepted at: Nov. 11, 2008

Citation

L. PINTILIE, V. STANCU, C. DRAGOI, M. VLAICU, Antiferroelectric-like behavior in polycrystalline Pb(Zr0.2Ti0.8)O3-BiFeO3 multilayers prepared by sol-gel method, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 11, pp. 3144-3149 (2008)