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Application of an impedance spectroscopy technique to study silicon solar cells and induced n+-p-p+ junction structures

S. KUMAR1, R. SRIVASTAVA1, G. S. CHILANA2, P. K. SINGH1,*

Affiliation

  1. National Physical Laboratory, Dr. KS Krishnan Road, New Delhi-110012, India
  2. Physics Department, Ramjas College, University of Delhi, Delhi 110 007, India

Abstract

An impedance spectroscopy technique is applied to measure solar cell parameters under dark conditions. The impedance data have been used to calculate the series resistance, diode factor, minority carrier lifetime; cell dynamic resistance and transition capacitance. The values of first three parameters are compared with those measured by conventional methods, which were in close agreement with each other. The technique has also been applied to an induced n-p-p+ structure (created by deposition of semitransparent Al and Pd layers on the two side of a p-Si wafer), developed to measure the lifetime in silicon, in order to understand the device structure, underlying physics and role of interfaces in determining the values of various parameters, particularly the lifetime values..

Keywords

Impedance spectroscopy, Solar cell, Cell characterisation, Lifetime.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

S. KUMAR, R. SRIVASTAVA, G. S. CHILANA, P. K. SINGH, Application of an impedance spectroscopy technique to study silicon solar cells and induced n+-p-p+ junction structures, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 371-374 (2007)