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Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7

M. A. PAESLER1,* , D. A. BAKER1, G. LUCOVSKY1, P. C. TAYLOR2, J. S. WASHINGTON1

Affiliation

  1. Physics Department, North Carolina State University, Raleigh, NC 27695-8202, USA
  2. Physics Department, Colorado School of Mines, Golden, CO 80401-1887, USA

Abstract

Bond constraint theory (BCT) and rigidity theory provide powerful frameworks for understanding the structure and properties of a-materials. In this paper, we discuss the foundations of BCT and rigidity theory with particular emphasis on chalcogenide compounds with atoms of varying coordination. Application of these theories to switching in a-chalcogenides holds the promise of finding the best composition suited for switching applications [1]. Recently a-chalcogenide switching has been applied successfully to programmable memory devices [2] as well as DVD technology where the quest for the discovery of better-suited materials continues. Thus, switching grants researchers today with an active arena of technological as well as fundamental study. Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy [3] is an ideally suited technique to investigate the switching properties of these materials. We predict that films of amorphous Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7 exhibit differing bonding structures and bond statistics, which result in different electronic and optical properties..

Keywords

Amorphous Ge-Sb-Te films, Bond constraint theory, EXAFS, Local bonding.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

M. A. PAESLER, D. A. BAKER, G. LUCOVSKY, P. C. TAYLOR, J. S. WASHINGTON, Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 2996-3001 (2007)