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Broadband second harmonic generation using total internal reflection-quasi phase matching in a multitapered isotropic semiconductor slab

P. DEBNATH1, S. DEB1,*

Affiliation

  1. Department of Electrical Engineering, National Institute of Technology, Agartala, Barjala, Jirania, Tripura (west), Pin-799046, Tripura, India

Abstract

This paper analytically explores the possibility of broad bandwidth (BW) as well as high conversion efficiency of second harmonic generation in a multi-tapered isotropic semiconductor s lab made of zinc telluride (ZnTe) and cadmium telluride (CdTe), using total internal reflection-quasi phase matching technique. A computer aided simulation has been executed where efficiency of 11.34 % with a 3 dB BW of 426 nm, centered at 10.737 μm and 22.37 % with a 3 dB bandwidth of 346 nm , centered at 7.85 μm has been obtained in a ZnTe and CdTe slab respectively of 10 mm slab length. Moreover, the effect of different conversion yield limiting factors along with that of the nonlinear law of reflection has also been taken into consideration..

Keywords

Total internal reflection-quasi phase matching, Zinc telluride, Cadmium telluride.

Submitted at: May 5, 2016
Accepted at: Aug. 9, 2017

Citation

P. DEBNATH, S. DEB, Broadband second harmonic generation using total internal reflection-quasi phase matching in a multitapered isotropic semiconductor slab, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 7-8, pp. 475-485 (2017)