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CdSe/MoS2 interfaces designed as gigahertz/terahertz electro-optical filters

A. F. QASRAWI1,2,* , W. S. GHANNAM1

Affiliation

  1. Department of Physics, Arab American University, Jenin, Palestine
  2. Department of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey

Abstract

CdSe thin films coated with MoS2 nanosheets were deposited by thermal evaporation to act as electro-optical filters in gigahertz/terahertz domains. Structural studies showed amorphous MoS2 growth on polycrystalline CdSe. MoS2 coating increased defects, microstrain, and reduced CdSe band gap from 2.09 eV to 1.95 eV, enhancing dielectric quality factor to several hundreds. Optical conductivity revealed cutoff frequencies from 0.06–5.66 THz within 1.15–3.50 eV. Signal propagation exhibited drift mobility of~52 cm2/Vs and carrier density of~1016 cm-3. Electrical tests showed microwave resonators, negative capacitance, and cutoff up to 350 GHz at 1800 MHz, enabling 6G applications..

Keywords

CdSe/MoS2, Electro-optic, Negative capacitance, Terahertz, Microwave.

Submitted at: Sept. 18, 2025
Accepted at: June 2, 2026

Citation

A. F. QASRAWI, W. S. GHANNAM, CdSe/MoS2 interfaces designed as gigahertz/terahertz electro-optical filters, Journal of Optoelectronics and Advanced Materials Vol. 28, Iss. 5-6, pp. 225-234 (2026)