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Challenges in growth of high-performance scintillator crystals

DIRK EHRENTRAUT1, AKIRA YOSHIKAWA1, TSUGUO FUKUDA1,*

Affiliation

  1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Abstract

Inorganic scintillator crystals are in steadily growing demand. High purity controlled doping and structural perfection of scintillator crystals is inevitable, what certainly is challenging the growth technology. We review our recent progress in the fabrication and characterization of scintillator crystals like 8 inches size BaF2 (super fast decay of about 600 ps), Pr3+ doped Lu3Al5O12 and Y3Al5O12 (high light yields) and undoped and In3+ doped ZnO. The latter shows two-component super fast decay (fast component 30-60 ps, slow component 250-800 ps). GaN might be the next candidate crystal to show fast luminescence, once good crystal quality is available..

Keywords

Scintillator crystal, BaF2, Lu3Al5O12, In3+ doped ZnO, GaN.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

DIRK EHRENTRAUT, AKIRA YOSHIKAWA, TSUGUO FUKUDA, Challenges in growth of high-performance scintillator crystals, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1198-1205 (2007)