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Changes in Si-SiO2 structure characteristics generated by MeV electron irradiation♣

S. KASCHIEVA1,* , K. CHRISTOVA1, S. N. DMITRIEV2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Joint Institute of Nuclear Research, Flerov Laboratory of Nuclear Reactions Dubna, Moscow region 141980, Russia

Abstract

We report on the influence of MeV electron radiation on the electronic characteristics and mechanical stress of Si-SiO 2 structures. n-type Si wafers were oxidized at 1050 °C in dry oxygen to produce 10 nm thick oxide layers. Samples were then irradiated by 23 MeV electrons with doses varying from 2.4x10 14 to 2.5x10 16 el.cm-2 . The radius of curvature was measured before and after the irradiation dose. Quasi-static Capacitance-Voltage and Thermally-Stimulated Current methods were used to study the electronic defect characteristics of the corresponding MOS structures. It was found that radiation defects induced at the Si-SiO 2 interface and in the oxide correlated with measured stress changes, in a manner that depended on the irradiation dose..

Keywords

MeV electrons, MOS structures, Radiation defects, Mechanical stress.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

S. KASCHIEVA, K. CHRISTOVA, S. N. DMITRIEV, Changes in Si-SiO2 structure characteristics generated by MeV electron irradiation♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1494-1497 (2009)