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Characterization of doped Bi4Ge3O12 single crystals by light-induced absorption, electrical and photoelectrical measurements

D. PETROVA1, V. MARINOVA2,* , R. C. LIU3, S. H. LINc4, K. Y. HSU3

Affiliation

  1. South West University, Department of Physics, 66 “Ivan Mihailov” str, 2700 Blagoevgrad, Bulgaria
  2. Central Laboratory Optical Storage and Processing of Information, Bulgarian Academy of Sciences, Acad. G. Bonchev Str,bl.101, 1113 Sofia, Bulgaria
  3. Photonics Department, National Chao Tung University, Ta Hsueh Rd 1001, Hsinchu, Taiwan
  4. Department of Electrophysics, National Chao Tung University, Ta Hsueh Rd 1001, Hsinchu, Taiwan

Abstract

Measurement of light-induced absorption changes, dark- and photoconductivity have been performed on Bi4Ge3O12 crystals doped with Fe, Rh and Fe+Rh. All samples exhibited a strong photochromic effect at room temperature, which was fully reversible after thermal annealing. It was found that Rh-doped Bi4Ge3O12 crystals possess a lower dark conductivity (σd = 5.2x10-14 (Ω.cm)-1) at room temperature in comparison with other investigated samples. New centers in the Bi4Ge3O12 inter-band structure, with thermal activation energies between 0.25 and 0.37 eV, have been created by doping with Fe and Rh. Fe–doped and Fe+Rh co-doped samples showed a non-linear photoconductivity dependence on light intensity, under illumination with a 514-nm laser..

Keywords

Single Bi4Ge3O12 crystals, Photochromic effect, Electrical properties, Photoelectrical properties.

Submitted at: Nov. 28, 2006
Accepted at: Feb. 15, 2007

Citation

D. PETROVA, V. MARINOVA, R. C. LIU, S. H. LINc, K. Y. HSU, Characterization of doped Bi4Ge3O12 single crystals by light-induced absorption, electrical and photoelectrical measurements, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 282-285 (2007)