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Charge inhomogeneity in strongly correlated systems

KATARZYNA CZAJKA1, MARCIN MIERZEJEWSKI1, MACIEJ M. MAŚKA1,*

Affiliation

  1. Department of Theoretical Physics, Institute of Physics University of Silesia, 40-007 Katowice, Poland

Abstract

Recent scanning tunneling microscopy (STM) shows significant superconducting gap inhomogeneity in the bismuth–based high–temperature superconductors.[1] Moreover, there is a positive correlation between the magnitude of the superconducting gap and the position of dopant oxygen atoms.[2] It suggests that weakly screened electrostatic potentials of the dopants are responsible for the gap inhomogeneity. On the other hand, despite the presence of strong potentials the observed charge inhomogeneity is less than expected. Carrying out an exact diagonalization of finite systems we demonstrate how strong electron correlations can explain this discrepancy..

Keywords

Charge inbomogeneity, High temperature superconductivity.

Submitted at: April 1, 2008
Accepted at: July 1, 2008

Citation

KATARZYNA CZAJKA, MARCIN MIERZEJEWSKI, MACIEJ M. MAŚKA, Charge inhomogeneity in strongly correlated systems, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 7, pp. 1679-1682 (2008)