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Chemical modification of single - crystal silicon surface

A. I. LUCHENKO1,* , M. M. MELNICHENKO1, V. SVEZHENTSOVA2

Affiliation

  1. Department of Physics, Taras Shevchenko Kiev National University, 2 Prospect Akad. Glushkova, Kiev 03127, Ukraine
  2. Institute of Semiconductor Physics of NASU, 45 Prospect Nauky, Kiev 03028, Ukraine

Abstract

Nanocrystalline silicon layers (3 – 60 nm) have been formed upon single-crystal silicon substrates of very large area (100 cm2) by stain etching. We studied optical and structural properties of nanocrystalline silicon by photoluminescence, photoluminescence excitation, reflection, scanning tunnel microscopy, scanning electron microscopy and Auger electronic spectroscopy methods. The photoluminescence method has shown that photoluminescence spectra of nanocrystalline silicon of different substrates differ insignificantly (∼10%) in intensity. The increase of photoluminescence intensity during prolonged aging in air at room temperature was observed. In the paper it is shown that in the process of formation of nanocrystalline silicon by stain etching, two stages could be defined: the stage of the structure self-organization at nanolevel (∼35 nm) and the stage of the structure self-organization at micro-level (∼60 nm). Latter is observed not only during structure organization, but also during changes of its chemical composition, photoluminescence and antireflection properties..

Keywords

Stain etching, Single-crystal silicon, Nanocrystalline silicon.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

A. I. LUCHENKO, M. M. MELNICHENKO, V. SVEZHENTSOVA, Chemical modification of single - crystal silicon surface, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1431-1434 (2007)