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Compact modeling of gate engineered triple material gate (TMG) AlInSb/InSb high electron mobility transistors

S. THEODORE CHANDRA1,* , N. B. BALAMURUGAN1, G. LAKSHMI PRIYA1, V. MURALIDHARAN1, D. S. SUGIRTHA RUBA RANI1

Affiliation

  1. National Instruments Electronics Laboratory, Department of ECE, Thiagarajar College of Engineering, Madurai, Tamilnadu - 625015, India

Abstract

A two dimensional analytical model is developed for the Triple Material Gate (TMG) AlInSb/InSb HEMT devices by solving the 2D Poisson equation. We use three gate materials of different work functions in this structure. The analytical model is obtained by solving the Poisson equation using parabolic approximation method to extract the parameters like channel potential, electric field distribution and threshold voltage. Due to the step in the surface potential profile, the drain current is screened from the source side, thereby suppressing the short channel effects in this structure. By considering the variation of gate source voltage, channel length under different metal regions and temperature, the working of the HEMT device is analyzed. The uniform electric field along the channel which is created by the small difference in the voltage improves the carrier transport efficiency. This difference in voltage is due to different work functions of the three materials used in the gate region. The results of the analytical model are compared with simulation results obtained from Sentarus TCAD and a good agreement between them is achieved..

Keywords

High Electron Mobility Transistor (HEMT), Gate engineering, Quantum well device, Poisson’s equation, Channel potential, Electric field..

Submitted at: Oct. 15, 2014
Accepted at: Jan. 21, 2015

Citation

S. THEODORE CHANDRA, N. B. BALAMURUGAN, G. LAKSHMI PRIYA, V. MURALIDHARAN, D. S. SUGIRTHA RUBA RANI, Compact modeling of gate engineered triple material gate (TMG) AlInSb/InSb high electron mobility transistors, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 1-2, pp. 222-228 (2015)