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Conduction mechanism involved in sensing mechanism of SnSe2

A. TOMESCU1,* , C. E. SIMION1

Affiliation

  1. National Institute R&D for Materials Physics, 77125- Bucharest-Magurele, Atomistilor str. 105 bis, P.O. Box MG. 7, Romania

Abstract

Simple investigation of the electrical resistance does not permit to draw up the conduction mechanism of thin SnSe2 layers. The presence of reducing gas atmospheres, respectively CH4, CO and H2O could change the concentration of the free charge carriers, beside electron affinity changes induced by the appearance of surface dipoles. Work function and electrical resistance were simultaneous investigated for thin SnSe2 films. The experimental results permit the evaluation of electron affinity and band-bending behavior. Conduction mechanism can be discussed in terms of surface or bulk contribution..

Keywords

SnSe2, Work function, Band-bending, Electron affinity, Reducing gases.

Submitted at: April 19, 2007
Accepted at: June 15, 2007

Citation

A. TOMESCU, C. E. SIMION, Conduction mechanism involved in sensing mechanism of SnSe2, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 6, pp. 1895-1897 (2007)