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Controlling of semiconductor/metal junction barrier by 5,10,15,20-tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl

F. YAKUPHANOGLU1,*

Affiliation

  1. Firat University, Faculty of Arts and Sciences, Department of Physics, Elazig, 23119, Turkey

Abstract

The electrical characteristics of RuP/p-Si/Al junction barrier have been investigated by current-voltage and capacitancevoltage characteristics. A deviation in I-V characteristic of the diode is observed due to effect of series resistance and interfacial layer. RuP/p-Si/Al diode is a metal-interfacial layer-semiconductor type diode with calculated electronic parameters (ideality factor, series resistance and barrier height; n=1.95, Rs=6.25 kΩ and φB=1.23 eV). The obtained barrier height and ideality factor values of RuP/p-Si/Al diode at the room temperature is significantly larger that that for the conventional Al/p-Si Schottky diode. It is evaluated that RuP organic layer modifies electronic properties of metalsemiconductor devices based on p-Si..

Keywords

Metal-semiconductor contact, Organic semiconductor, Series resistance.

Submitted at: May 9, 2007
Accepted at: Nov. 16, 2007

Citation

F. YAKUPHANOGLU, Controlling of semiconductor/metal junction barrier by 5,10,15,20-tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 11, pp. 3651-3654 (2007)