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M. GHASEMLOO1, M. T. HOSSEINNEJAD2,* , M. ETTEHADI ABARI2
- Department of Physics, Yadegar-e-Imam Khomeini (RAH) Shahre Rey Branch, Islamic Azad University, Tehran, Iran
- Young Researchers and Elites Club, Science and Research Branch, Islamic Azad University, Tehran, Iran
Vanadium pentoxide (V2O5) thin films were deposited on glass substrates using a low energy (1.3 kJ) plasma focus device. The V2O5 thin films were deposited with 10, 20 and 30 shots. The XRD results demonstrated that the degree of crystallinity and the average grain size of the V2O5 thin films enhance with more shots. Raman scattering analysis revealed the formation of the V2O5 thin films which was in suitable agreement with the XRD results. The SEM and AFM analyzes indicated a growth of nanoparticles/agglomerates on the surface of films, and enhancement of surface roughness of layers with increasing of shots..
Vanadium pentoxide, Plasma focus, XRD, AFM, SEM.
Submitted at: Dec. 4, 2017
Accepted at: Oct. 10, 2018
M. GHASEMLOO, M. T. HOSSEINNEJAD, M. ETTEHADI ABARI, Correlation between growth conditions, nanostructural, and morphological characteristics of vanadium pentoxide thin films deposited by low energy plasma focus device, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 9-10, pp. 566-571 (2018)
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