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Correlation between porosity of porous silicon and optoelectronic properties

A. MORTEZAALI1,* , S. RAMEZANI SAN1, F. JAVANI JOONI1

Affiliation

  1. Department of physics, Alzahra University, Tehran 1993891176, Iran

Abstract

We calculate the optical constants and absorption coefficient of n-dopped porous silicon (PS), by using Effective media approximation (EMA) analysis. Refractive index,n, decreases with increasing porosity in visible region. However, absorption coefficient, α , increases with increasing porosity in this region. Also energy band gap of PS has been determined using absorption spectra. Our results show that band gap of PS is quasidirect..

Keywords

Porous silicon, Optical properties, Effective media approximation (EMA), Energy gap.

Submitted at: Oct. 15, 2009
Accepted at: Nov. 19, 2009

Citation

A. MORTEZAALI, S. RAMEZANI SAN, F. JAVANI JOONI, Correlation between porosity of porous silicon and optoelectronic properties, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1647-1650 (2009)