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Crystal structure and magnetic properties of the new ternary actinide compounds in An-Pd-Al system (An=U, Np)

Y. HAGA1,* , D. AOKI2, Y. HOMMA2, S. IKEDA1, T. D. MATSUDA1, E. YAMAMOTO1, H. SAKAI1, N. TATEIWA1, N. D. DUNG1,3, A. NAKAMURA1, Y. SHIOKAWA2, Y. ONUKI1,3

Affiliation

  1. Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
  2. Institute for Materials Science, Tohoku University, Oarai, Ibaraki 311-1313, Japan
  3. Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan

Abstract

We report the crystal structure and magnetic properties of new ternary actinide compounds. A series of compounds having AnPd5Al2 composition crystallize in the body-center tetragonal ZrNi2Al5-type tetragonal structure (I4/mmm). Although the magnetic susceptibility of both compounds follows the Curie-Weiss behavior at high temperature, no magnetic phase transition was observed. UPd5Al2 has a nonmagnetic ground state where the magnetic susceptibility saturates at low temperature, while NpPd5Al2 superconducts below 4.9 K as reported recently. Another new ternary uranium intermetallic compound U2/3Pd2Al5 crystallizes in the hexagonal structure (P63/mmc) with the lattice parameters 4.3278 and c = 16.2870 Å. The composition analysis and the single crystal X-ray diffraction revealed the peculiar disordered structure where 1/3 of uranium atoms are replaced by three aluminum atoms. The similar structure is reported previously for the compound in U-Fe-Si system. Magnetization as well as specific heat measurements revealed a low temperature anomaly corresponding to the magnetic phase transition..

Keywords

Actinide intermetallics, Crystal growth, X-ray diffraction.

Submitted at: April 1, 2008
Accepted at: July 1, 2008

Citation

Y. HAGA, D. AOKI, Y. HOMMA, S. IKEDA, T. D. MATSUDA, E. YAMAMOTO, H. SAKAI, N. TATEIWA, N. D. DUNG, A. NAKAMURA, Y. SHIOKAWA, Y. ONUKI, Crystal structure and magnetic properties of the new ternary actinide compounds in An-Pd-Al system (An=U, Np), Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 7, pp. 1601-1606 (2008)