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Crystallization kinetics in materials with a two-phase formation from an amorphous phase

E. PROKHOROV1,* , G. TRAPAGA1, YU. KOVALENKO2

Affiliation

  1. CINVESTAV - Unidad Queretaro, Juriquilla, Querétaro 76230, Mexico
  2. CIATEQ, Calzada del Retablo 150, Queretaro 76150, Mexico

Abstract

The aim of this article is to propose a simple analytical model that is capable of describing the isothermal crystallization process in materials with the formation of two crystalline phases from the same parent amorphous phase, as illustrated with an example for Ge:Sb:Te thin films. This model explains deviations from the well-known Johnson–Mehl–Avrami Kolmogorov (JMAK) kinetics theory. The model predictions were compared with experimental results obtained from X-ray measurements on the chalcogenide glasses with composition of Ge2Sb2Te5 (where the formation of a stable crystalline phase is preceded by the formation of a metastable phase) and in Ge1Sb2Te4 films doped by 12% atomic of oxygen (where two stable crystalline phases are formed from the same parent amorphous phase). This model allows representing similar transformation curves as those obtained from the experiments and is capable of predicting the deviation from the classical linear dependence in the JMAK plot..

Keywords

Ge-Sb-Te, Thin film, Crystallization kinetics, Amorphous phase.

Submitted at: Oct. 11, 2006
Accepted at: Nov. 2, 2006

Citation

E. PROKHOROV, G. TRAPAGA, YU. KOVALENKO, Crystallization kinetics in materials with a two-phase formation from an amorphous phase, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 6, pp. 2066-2069 (2006)