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Crystallization of PLD deposited ITO thin films by thermal treating in various gaseous environments

C. VIESPE1,* , C. GRIGORIU1, M. POPESCU2, F. SAVA2, A. LŐRINCZI2, A. VELEA2, S. ZAMFIRA3

Affiliation

  1. National Institute R&D of Lasers, Plasma and Radiation Physics, P. O. Box MG. 6, 077125 Magurele, Ilfov, Romania
  2. National Institute of Materials Physics, P. O. Box MG. 7, 077125 Magurele, Ilfov, Romania
  3. Transylvania University of Brasov, Romania

Abstract

ITO films of composition (In2O3)0.9 – (SnO2)0.1 have been prepared by pulsed laser deposition (PLD).The films were found to be amorphous. The structure and evolution of the films during annealing in air, oxygen atmosphere and reducing atmosphere (CO2) have been investigated by X-ray diffraction. The films annealed in ambient atmosphere start to crystallize under 250 oC annealing temperature. The films treated in oxygen atmosphere crystallize at higher temperature (~300 oC)..

Keywords

ITO, Pulsed laser deposition, X-ray diffraction, Amorphous, Crystallization.

Submitted at: July 1, 2007
Accepted at: Nov. 16, 2007

Citation

C. VIESPE, C. GRIGORIU, M. POPESCU, F. SAVA, A. LŐRINCZI, A. VELEA, S. ZAMFIRA, Crystallization of PLD deposited ITO thin films by thermal treating in various gaseous environments, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 11, pp. 3563-3566 (2007)