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Cu2S/CdS:Zn heterojunction synthetized by chemical bath deposition for photovoltaic application

H. MOUALKIA1, L. HERISSI1,2,* , H. CHERIET1, D. RECHEM1, L. REMACHE1

Affiliation

  1. Laboratory of Materials and Structure of Electromechanical Systems and their Reliability, Faculty of exact sciences and natural and life sciences, Larbi Ben M’hidi University, Oum El Bouaghi 04000, A
  2. Department of Matter Sciences, Echahid Cheikh Larbi Tebessi University, Tebessa 12000, Algeria

Abstract

Copper sulfide (Cu2S) thin film was deposited on zinc doped cadmium sulfide (CdS:Zn) entirely produced by chemical bath deposition technique onto transparent indium tin oxide (ITO) coating substrates, using gold as a back contact. Before this, the structural, morphological, and optical properties of undoped and 4 wt % Zn doped CdS thin films have been investigated. The X-ray diffraction spectra showed that the CdS thin films are polycrystalline nature with preferred growth along (111) orientation and the incorporation of Zn does not change qualitatively the crystalline phase of CdS. Scanning electron microscopy measurements indicated that deposited films are homogeneous. Optical transmittance of the film showed an increasing trend from 76 % in the undoped film to 85 % in 4 wt % Zn doped film. The optical band gap of CdS is found to decrease from 2.43 eV to 2.37 eV for 4 wt % Zn doped thin film. The I(V) characteristic of the Cu2S/CdS:Zn heterojunction was found to be rectifying and the current voltage measurements revealed an ideality factor (n = 2.3)..

Keywords

Metal chalcogenides, Chemical bath deposition, Cu2S/CdS:Zn heterojunction, Ideality factor, Saturation current.

Submitted at: June 22, 2024
Accepted at: Oct. 7, 2024

Citation

H. MOUALKIA, L. HERISSI, H. CHERIET, D. RECHEM, L. REMACHE, Cu2S/CdS:Zn heterojunction synthetized by chemical bath deposition for photovoltaic application, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 9-10, pp. 381-387 (2024)