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Current transport mechanisms of n-ZnO/p-CuO heterojunctions

F. ÖZYURT KUŞ1, T. SERİN1, N. SERİN1

Affiliation

  1. Department of Physics Engineering, University of Ankara, 06100 Ankara, Turkey

Abstract

In this study, n-ZnO/p-CuO heterojunction have been fabricated by sol-gel dip-coating technique which is simple and inexpensive. The structure of the p-CuO/n-ZnO was analyzed by X-ray diffraction spectroscopy and UV-VIS spectroscopy. The electrical junction properties were characterised by temperature dependent current-voltage (I-V) characteristics and at high frequency capacitance-voltage (C-V) characteristic at room temperature. The structure showed non-ideal behaviour of I-V characteristics with an ideality factor of 3.5 at room temperature. Temperature dependent forward current-voltage measurements suggest that trap-assisted multi-step tunnelling is the dominant current mechanism in this structure..

Keywords

ZnO, CuO, Heterojunction, Sol-gel, I-V characteristics.

Submitted at: Oct. 15, 2009
Accepted at: Nov. 19, 2009

Citation

F. ÖZYURT KUŞ, T. SERİN, N. SERİN, Current transport mechanisms of n-ZnO/p-CuO heterojunctions, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1855-1859 (2009)