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Current transport mechanisms studied by I-V-T measurement on Cu-nMoSe2 Schottky diode

C. K. SUMESH1,* , K. D. PATEL2, V. M. PATHAK2, R. SRIVASTAVA2

Affiliation

  1. Department of Physics, Charotar University of Science and Technology – CHANGA , Anand, - 388 421, INDIA
  2. Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, - 388120, INDIA

Abstract

Cu-nMoSe 2 Schottky diode has been fabricated and the current transport mechanism of the prepared diodes have been investigated for a temperature range of 320K-50K. From the I-V results various Schottky barrier parameters were evaluated. It has been observed that the ideality factor increases with decrease in temperature and its value increases from: 1.1 at 320K to 67.3 at 50K. On the other hand, the barrier height decreases with decrease in temperature and its value at 320K is 0.72eV which becomes 0.1eV at 50K..

Keywords

Schottky diode, Cu-MoSe 2, Transport mechanism.

Submitted at: April 2, 2009
Accepted at: Nov. 19, 2009

Citation

C. K. SUMESH, K. D. PATEL, V. M. PATHAK, R. SRIVASTAVA, Current transport mechanisms studied by I-V-T measurement on Cu-nMoSe2 Schottky diode, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1718-1722 (2009)