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Czochralski growth of pure and doped lead tungstate single crystals

AL. DARABONT1, C. NEAMŢU1,*

Affiliation

  1. National Institute for R&D of Isotopic and Molecular Technologies, 71-103 Donath St., POB 700, 400293 Cluj-Napoca, Romania

Abstract

In this paper we report the growth of pure and doped lead tungstate (PbWO4) single crystals by the Czochralski method, using a resistive heating system. Variations in the nature of crystal cracking were observed. These structural defects are related to the seed rotation, crystal pulling rate and the axial temperature gradient. A gradual decrease in the optical quality (from top to bottom) of the growing crystal was observed. Repeated growth processes and the high purity of the starting materials (Pb(NO3)2 and Na2WO4) yielded transparent crystals. Doped lead tungstate crystals were grown for luminescence studies..

Keywords

Lead tungstate, Czochralski growth, Scintillation.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

AL. DARABONT, C. NEAMŢU, Czochralski growth of pure and doped lead tungstate single crystals, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1254-1256 (2007)