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Damage profiling of very shallow implanted silicon

Y. KARMAKOV1,* , I. CHAKAROV2

Affiliation

  1. Condensed Matter Physics Dept., Faculty of Physics, Sofia University, Sofia, Bulgaria
  2. Silvaco International, 4701 Patrick Henry Drive, Santa Clara, California 95054, USA

Abstract

An attempt is made to bring together the measured damage depth profiles of very low energy Ge+ and B+ implants in crystalline silicon by spectroscopic ellipsometry and simulations using the ATHENA code, version 5.0. A global and original calibration methodology has been used to provide the physical set of parameters for simulations. The measured depth profiles(damage and concentration) of very low energy Ge implants in c-Si allow the identification of realistic values of some defect species in the implanted region, and depth profiles of the displaced atoms. It is shown that the complementary use of SE and suitable calibration algorithms could be an effective tool for a reliable conversion between damage and concentration depth profiles in very low energy Ge+ implants. The SE damage depth profile of 5keV Ge ions, 1x1015cm-2 in c-Si shows a different shape of the tail, below the amorphous/crystalline boundary, in comparison to other profiles of Ge+ with energies from 2keV to 20keV and doses of 1x1015cm-2, optimized for very low energy B+ implants and preamorphization(PAI) in deep submicron CMOS. Probably, the different shape of the damage profile of 5keV Ge, 1x1015cm-2, is one of the reasons for the least amount of transient enhanced diffusion for B+ implants in PAI silicon..

Keywords

Ion implantation, Shallow, Ellipsometry, Simulations, Damage, Profile, Silicon.

Submitted at: Nov. 1, 2006
Accepted at: Feb. 15, 2007

Citation

Y. KARMAKOV, I. CHAKAROV, Damage profiling of very shallow implanted silicon, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 2, pp. 409-412 (2007)