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Dark currents ın the uncooled InAs / InAsSbP photodıodes for the spectral range 1.6 - 3.5 μm

M. AHMETOGLU (AFRAILOV)1,*

Affiliation

  1. Department of Physics, Uludag University, 16059, Görukle, Bursa, Turkey

Abstract

The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 μm are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1 C2 ~V , and the impurity concentration in the weakly doped region was (5-7)×1015 cm-3 at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes..

Keywords

Dark currents, photodiode structures, liquid phase epitaxy (LPE).

Submitted at: Aug. 10, 2007
Accepted at: Nov. 16, 2007

Citation

M. AHMETOGLU (AFRAILOV), Dark currents ın the uncooled InAs / InAsSbP photodıodes for the spectral range 1.6 - 3.5 μm, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 11, pp. 3567-3570 (2007)