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DC conductivity in GeSb2Te4 and (GeSb2Te4)90(SnSe2)10 phase change materials

M. POPESCU1,* , M. KUBLIHA2, J. KALUŽNÝ2, A. VELEA1, A. LŐRINCZI1

Affiliation

  1. National Institute R&D of Materials Physics, Atomistilor str. 105 bis, 077125-Bucharest – Măgurele, P.O.Box MG. 7, Romania
  2. Institute of Materials, Faculty of Materials Science and Technology of the Slovak University of Technology, Bottova 9, 91724 Trnava, Slovakia

Abstract

The dc electrical conductivity of the bulk amorphous GeSb2Te4 material has been investigated. Pure and samples doped by 10 at. % SnSe2 have been measured. The conductivity in the samples has been compared with that of SnSe2 bulk sample. The activation energy of the doped sample is 0.165 eV. During heating the conductivity of doped material increases, reaches a maximum and then decreases. The comparison with the pure SnSe2 samples allows to explain this behavior by the release above 148 oC of a small amount of selenium not bonded in the network..

Keywords

GeSb2Te4, Phase change material, Electrical conductivity, SnSe2, Activation energy.

Submitted at: Nov. 23, 2007
Accepted at: Dec. 7, 2007

Citation

M. POPESCU, M. KUBLIHA, J. KALUŽNÝ, A. VELEA, A. LŐRINCZI, DC conductivity in GeSb2Te4 and (GeSb2Te4)90(SnSe2)10 phase change materials, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 12, pp. 3951-3953 (2007)