"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Deep traps responsible for capacitance hysteresis in AlGaN/GaN FAT-HEMT’s studied under the temperature effects

MANEL CHARFEDDINE1,* , FIKRIA JABLI1, MOHAMED ALI ZAIDI1,2, HASSEN MAAREF1

Affiliation

  1. Laboratoire des Micro-Optoélectroniques et Nanostructures, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia
  2. Al majmaah University college of Science Al- Zulfi, Arabi Saoudite

Abstract

Capacitance characteristics with voltage of AlGaN/GaN FAT-HEMTs on Si substrate are reported. From C-V curves we can extract the 2DEG sheet charge density versus the gate bias and the carrier distribution profile. An important problem facing nitride-based high power microwave electronics is the presence of deep levels and anomalies in AlGaN/GaN structure. The existence of the capacitance hysteresis can be explained by built-in strain effects and internal electric field effects (due to spontaneous and piezoelectric polarizations) at the AlGaN/GaN interface. Also, it is induced by the location of the continuum of interface trap states relative to the Fermi level. The related deep levels are directly characterized and extracted by Deep Level Transient Spectroscopy (DLTS) measurement that has been studied in previous work. The identification of this trap has occurred and a remarkable correlation between C-V characteristics, defects and hysteresis capacitance effects has been discussed..

Keywords

AlGaN/GaN; FAT-HEMTs; C-V, Capacitance DLTS, Deep level and Capacitance hysteresis.

Submitted at: Aug. 18, 2013
Accepted at: July 10, 2014

Citation

MANEL CHARFEDDINE, FIKRIA JABLI, MOHAMED ALI ZAIDI, HASSEN MAAREF, Deep traps responsible for capacitance hysteresis in AlGaN/GaN FAT-HEMT’s studied under the temperature effects, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 7-8, pp. 820-825 (2014)