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Department of Physics, Sri Venkateswara University, Tirupati-517 502, India

A. ASHOK KUMAR1, V. JANARDHANAM1, V. RAJAGOPAL REDDY1, P. NARASIMHA REDDY1,*

Affiliation

  1. Department of Physics, S.V.University, Tirupati-517 502, India

Abstract

The temperature dependence of current-voltage characteristics of the Pd Schottky contacts on n-InP (100) has been measured in the temperature range of 200-400 K. Based on thermionic emission (TE) theory, the forward and reverse current-voltage (I-V) characteristics are analyzed to estimate the Schottky barrier parameters. It is observed the decrease in ideality factor and increase in barrier height (BH) with increasing temperature. The estimated values of barrier height and ideality factor are varied from 0.38 eV and 5.48 at 200 K to 0.7 eV and 2.01 at 400 K respectively. The calculated value of Richardson constant is 2.18 A cm-2 K-2 from temperature dependent I-V studies, which is lower than the known value. The nonlinearity in the Richardson plot and strong dependence of Schottky barrier parameters on temperature may be attributed to the spatial inhomogeneity in the interface. Potential fluctuation model has been used to explain the results obtained in this study..

Keywords

Current-voltage characteristics, Schottky Contacts, Indium Phosphide (InP).

Submitted at: Dec. 4, 2007
Accepted at: Dec. 7, 2007

Citation

A. ASHOK KUMAR, V. JANARDHANAM, V. RAJAGOPAL REDDY, P. NARASIMHA REDDY, Department of Physics, Sri Venkateswara University, Tirupati-517 502, India, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 12, pp. 3877-3880 (2007)