V. K. TOMAR¹, L. S. PATIL¹, D. K. GAUTAM^1,*

Abstract

The silicon nitride (SiNx) films were deposited using thermal CVD system with organic precursor hexamethyldisilazane (HMDS) and ammonia (NH3) gas as a source of silicon and nitrogen respectively. The optical and physical properties of the deposited silicon nitride films have been investigated with the variation in deposition temperature in the range of 775 to 850 0C. The deposited SiNx films were characterized using Ellipsometry, Fourier Transform Infrared (FTIR) Spectroscopy and Scanning Electron Microscopy (SEM-JSM-6360). The refractive index of the deposited films increases while stress found to be decrease with corresponding increase in deposition temperature. The peak position of Si–N-Si stretching vibration move towards lower wave number while FWHM increases with increase in the deposition temperature. The peak intensity of Si-H and N-H stretching peaks found to be reduced with increase in deposition temperature. The total H and Si-H concentration rapidly decreases with increase in deposition temperature. It signifies an improvement in the quality of the deposited films. These deposited silicon nitride films exhibit a very well controlled refractive index in the range of 1.76 –2.1, which is very attractive for the application of silicon nitride films in photonic wave-guides devices..

Keywords

Silicon nitride, HMDS, Thermal CVD, Optical and Physical Properties, Photonics.

Submitted at: June 15, 2008
Accepted at: Oct. 7, 2008

Citation

V. K. TOMAR, L. S. PATIL, D. K. GAUTAM, Deposition and characterization of silicon nitride films using HMDS for photonics applications, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 10, pp. 2657-2662 (2008)

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