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Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements♣

C. LONGEAUD1,* , J. A. SCHMIDT2, R. R. KOROPECKI2, J. P. KLEIDER1

Affiliation

  1. Laboratoire de Génie Electrique de Paris, UMR 8507 CNRS, Universités Paris VI et XI, 11 rue Joliot-Curie, Plateau de Moulon, 91190 Gif sur Yvette, France
  2. INTEC (UNL-CONICET) and FIQ (UNL), Güemes 3450, S3000GLN Santa Fe, Argentina

Abstract

In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations..

Keywords

Thin films, Photoconductivity, Computer simulation.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

C. LONGEAUD, J. A. SCHMIDT, R. R. KOROPECKI, J. P. KLEIDER, Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1064-1071 (2009)