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Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates

G. SURYANARAYANAN1, A. A. KHANDEKAR2, T. F. KUECH1,2, S. E. BABCOCK1,3,*

Affiliation

  1. Materials Science Program, University of Wisconsin – Madison, Madison, WI 53706, USA.
  2. Department of Chemical and Biological Engineering, University of Wisconsin – Madison, Madison, WI 53706, USA
  3. Department of Materials Science and Engineering, University of Wisconsin – Madison, Madison, WI 53706, USA.

Abstract

Backscattered electron Kikuchi pattern-based orientation imaging was used to investigate the origin of the improved epitaxial alignment that is realized when a lateral epitaxial overgrowth approach is used for the growth of InAs on GaAs. The island size at coalescence appears to be critical in determining whether a single or multi-fold tilted epitaxial orientation relationship(s) is (are) present in the film. Sub-micron (~ 0.5 m or less) island sizes at coalescence appear to lead to a single orientation aligned with the GaAs. This work shows that spatial constraints imposed at the early stages of growth, in this case through use of a mask-patterned substrate, can be used to promote coalescence at small island size as an alternative or parallel approach to setting growth conditions (temperature, precursor stoichiometry, etc) in order to control the nucleation and growth kinetics..

Keywords

Crystal morphology, Defects, A1: Characterization, Substrates, Metalorganic vapor phase epitaxy, Semiconducting III-V materials.

Submitted at: Nov. 14, 2006
Accepted at: May 15, 2007

Citation

G. SURYANARAYANAN, A. A. KHANDEKAR, T. F. KUECH, S. E. BABCOCK, Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 5, pp. 1242-1245 (2007)