Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
- Istanbul University, Science Faculty, Physics Department, Vezneciler, 34459 Istanbul, Turkey
The dielectric properties of TlSe thin films with thickness of 2000 Å, obtained via thermal evaporation of TlSe crystals, have been measured using ohmic Al electrodes in the frequency range 0.2-100 kHz and within the temperature interval 293-353 K. The dielectric constant and the dielectric loss of are found to decrease with increasing frequency and increase with increasing temperature. This behavior is explained two possible polarization mechanisms in the films. From the dielectric constant and the dielectric loss expressions, the distribution of relaxation times was derived. There are two possible relaxation regions in the investigated frequency range..
Relaxation time, TlSe, thin-film, Dielectric properties.
Submitted at: March 21, 2019
Accepted at: Feb. 17, 2020
S. YAKUT, Dielectric relaxation spectrum of TlSe thin films, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 1-2, pp. 89-92 (2020)
- Download Fulltext
- Downloads: 235 (from 156 distinct Internet Addresses ).