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Differential impact of a-Nb2O5 and a-TiO2 ETL on the photoelectric performance of Cs3Sb2I9-xClx perovskite solar cells

FEI ZHAO1,* , PEIZHI YANG2,* , JUNHAO CHU3

Affiliation

  1. School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu, 213002, China
  2. Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China
  3. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Abstract

Recently, the stable all-inorganic lead-free Cs3Sb2I9-xClx perovskite-like solar cells have attracted enormous attention where the electron transport layer (ETL) is extremely important. Herein, the amorphous Nb2O5 (a-Nb2O5) ETL was prepared by sputtering technology at room temperature to increase the optical band gap of a-Nb2O5 layer, improve its conduction band minimum (CBM), suppress charge recombination at the a-Nb2O5/Cs3Sb2I9-xClx interface, and reduce leakage current of Cs3Sb2I9-xClx solar cells. More importantly, the a-Nb2O5-based Cs3Sb2I9-xClx solar cell presents a higher efficiency (1.75 %) compared with Cs3Sb2I9-xClx device containing a-TiO2 ETL (0.69 %). Additionally, the a-Nb2O5 ETL increases the device stability in air. This study highlights the great effect of a-Nb2O5 ETL as a carrier controller on enhancing performance of Cs3Sb2I9-xClx solar cells..

Keywords

Amorphous Nb2O5, Electron transport layer, Charge recombination, Lead-free Cs3Sb2I9-xClx solar cells.

Submitted at: Dec. 31, 2022
Accepted at: Aug. 10, 2023

Citation

FEI ZHAO, PEIZHI YANG, JUNHAO CHU, Differential impact of a-Nb2O5 and a-TiO2 ETL on the photoelectric performance of Cs3Sb2I9-xClx perovskite solar cells, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 7-8, pp. 326-333 (2023)