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Doping mechanisms in stabilized amorphous Se films

K. TANAKA1,*

Affiliation

  1. Department of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo, Japan

Abstract

As- and Cl-doped, stabilized amorphous Se films have been utilized in photoconductive devices, while roles of the co-doping with a fixed As/Cl ratio remain speculative. We study the mechanism through analyses of structural and electronic energies in relevant Se clusters using ab initio calculations. The result suggests that, while sole doping of As and Cl causes gap states for holes and electrons, respectively, the co-doping produces -(As-Cl)- units in Se chains, which possess no gap states..

Keywords

Selenium, Gap state, Photoconduction, Ab initio calculation, GAMESS.

Submitted at: Sept. 20, 2016
Accepted at: Feb. 10, 2017

Citation

K. TANAKA, Doping mechanisms in stabilized amorphous Se films, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 1-2, pp. 27-32 (2017)