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Effect of annealing temperature and deposition time on Sb2S3 thin films

S. SRIKANTH1,* , N. SURIYANARAYANAN2, S. PRABAHAR1, V. BALASUBRAMANIAN1, D. KATHIRVEL3

Affiliation

  1. Department of Physics, Tamilnadu College of Engineering, Karumathampatti, Coimbatore-641659, India
  2. Department of Physics, Government College of Technology, Coimbatore-641013, India
  3. Department of Physics, Kalaignar Karunanidhi Institute of Technology, Coimbatore-641602, India

Abstract

In the present research paper, Sb2S3 thin films are deposited on glass substrates for various depositions time periods. Preparative parameters such as bath composition, complexing agent and deposition time are optimized. The effect of thermal annealing on the structural and optical properties of antimony tri sulfide (Sb2S3) thin films is studied. The structural investigations are performed by X-ray diffraction (XRD); Scanning electron microscopy (SEM) and the compositional analysis are carried out by Energy dispersive analysis (EDAX). As-deposited films are microcrystalline in nature. After thermal annealing at temperature 423K the Sb2S3 thin films are found to be polycrystalline. The absorption spectrum of asdeposited and annealed films indicates that the absorption depends on thickness and the band gap energy Eg is found to be direct..

Keywords

Antimony tri Sulphide, Structural Properties, Thin films, Optical band gap, XRD, EDAX, SEM.

Submitted at: Sept. 28, 2010
Accepted at: Oct. 14, 2010

Citation

S. SRIKANTH, N. SURIYANARAYANAN, S. PRABAHAR, V. BALASUBRAMANIAN, D. KATHIRVEL, Effect of annealing temperature and deposition time on Sb2S3 thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 10, pp. 2075-2081 (2010)