Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Effect of antimony on structure strained quantum well laser



  1. LATSI Laboratory, Faculty of the Engineering Sciences, University Saad Dahlab of Blida, BP270, 09000, Blida, Algeria
  2. Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université des Sciences et Technologies de Lille 1, Avenue Poincaré, BP 6006959652 Villeneuve d’Ascq, France


This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction band into two sub bands while adding antimony will split the valence band. This separation will give a reduced a band gap energy which is interesting for getting a 1.55μm wavelength optical fiber window. We have also studied the effect of strain on the band structure and particularly on the conduction band. We have calculated the x(Ga), y(N) and z(Sb) concentrations taking into account the effects of the strain, the temperature and the quantum well width..


Component, Materials, Laser, Quantum well.

Submitted at: Sept. 28, 2013
Accepted at: Nov. 7, 2013


ABDEELKADER AISSAT, FARID YKHLEF, SAID NACER, JEAN PIERRE VILCOT, Effect of antimony on structure strained quantum well laser, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1185-1187 (2013)