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Effect of deep levels on the capacitance of MIS structures with sol-gel TiO2 films♣

S. SIMEONOV1,* , A. SZEKERES2, I. MINKOV2, K. IVANOVA3, M. GARTNER4, M. NICOLESCU4, M. ANASTASESCU4

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Ch. 72, Sofia 1784, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  4. Institute of Physical Chemistry, Romanian Academy of Sciences, Spl. Independentei 202, 060021 Bucharest, Romania

Abstract

The capacitance-voltage characteristics of MIS structures with un-doped and lanthanum doped TiO 2 dielectric films, prepared by a sol-gel technique, have been measured at different test voltage frequencies from 100 Hz to 100 kHz. The results showed an increase in the capacitance in the accumulation regime and the dielectric constant of TiO 2(La) films with decreasing test voltage frequency. The average bulk energy density of deep levels, responsible for the observed dependences was estimated to be of the order of 10 16 cm -3 eV-1 ..

Keywords

Thin films, Electrical properties, Deep levels, Dielectric constant.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

S. SIMEONOV, A. SZEKERES, I. MINKOV, K. IVANOVA, M. GARTNER, M. NICOLESCU, M. ANASTASESCU, Effect of deep levels on the capacitance of MIS structures with sol-gel TiO2 films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1505-1508 (2009)