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Effect of electron lateral diffusion in transmission -mode varied-doping Al0.37Ga0.63N photocathode on resolution

HONGGANG WANG1,2,* , XUEHONG JI3, DIANLI HOU1, LILI WANG1, JINGUANG HAO1, YAOZHANG SAI1

Affiliation

  1. School of Information and Electrical Engineering, Ludong University, 264025, Yantai, China
  2. School of Electronic and Optical Engineering, Nanjing University of Science and Technology, 210094, Nanjing, China
  3. Department of Logistics, Ludong University, 264025, Yantai, China

Abstract

To achieve a high resolution of transmission-mode Al0.37Ga0.63N photocathode, by establishing the modulation transfer function (MTF) model of this photocathode, we have researched the effect of emission layer thickness Te, electron diffusion length Ld, recombination velocity at back-interface Vb, and optical absorption coefficient α on MTF of varied-doping and uniform-doping Al0.37Ga0.63N photocathodes. The computational results indicate that the varied-doping structure has a potential in improving both resolution and quantum efficiency of transmission-mode Al0.37Ga0.63N photocathode. This improvement is mainly attributed to the reduction of electron lateral diffusion caused by an electric field which is produced by the varied-doping structure, and thus electron transport towards photocathode surface is facilitated..

Keywords

Lateral diffusion, Transmission-mode, Varied-doping, Al0.37Ga0.63N photocathode, Resolution.

Submitted at: July 25, 2021
Accepted at: Feb. 11, 2022

Citation

HONGGANG WANG, XUEHONG JI, DIANLI HOU, LILI WANG, JINGUANG HAO, YAOZHANG SAI, Effect of electron lateral diffusion in transmission -mode varied-doping Al0.37Ga0.63N photocathode on resolution, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 1-2, pp. 28-34 (2022)