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Effect of indium incorporation on the physical parameters of Ge-Se glassy alloy

ISHU1,* , S. K. TRIPATHI2, P. B. BARMAN1

Affiliation

  1. Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P.-173215 India
  2. Department of Physics, Panjab University, Chandigarh India

Abstract

Chalcogenide bulk glasses from Ge20Se80-xInx system, with x = 0, 5, 10, 15, 20 at. % has been prepared from high purity Ge, Se and In. Some physical parameters of these glassy alloys have also been examined theoretically. Nearest neighbor coordination number < r >, number of constraints per atom ( ) con N as a function of < r >is also calculated. It has been observed that con N exceeds the number of degree of freedom( ) d N with increasing In content and shows non monotonic behavior. The compactness, as calculated from measured density of glassy system were examined in order to display the chemical threshold in the system using Phillips – Thorpe topological models proposed for the structure of these covalently bonded solids. Maximum of the compactness is observed at < r >= 2.4 for Ge20Se80 system is attributed to floppy to rigid transition occurring in networks. Lone pair of the system is also calculated and is found to decrease with increasing In content. This is due to the interaction between In atom and lone pair of bridging Se atoms, as interaction decreases the role of lone pair electron in glass formation..

Keywords

Chalcogenide glasses, Density, Compactness, Constraints, Lone pairs.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

ISHU, S. K. TRIPATHI, P. B. BARMAN, Effect of indium incorporation on the physical parameters of Ge-Se glassy alloy, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3039-3043 (2007)