FALAH I MUSTAFA¹, AKSHAY KUMAR¹, N. GOYA¹, S. K. TRIPATHI^1,*

Abstract

Thin films of chemical composition InxSe1-x (x = 0.50 and 0.60 at %) are prepared by thermal evaporation technique. The optical properties of these thin films are determined by a method, based only on the transmission spectra at normal incidence, measured over the 400-2000 nm spectral range. This useful optical method takes into consideration the non-uniform thickness of thermally evaporated thin films. The dispersion of refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model. The optical absorption edge is described using the non-direct transition model proposed by Tauc and the optical band gap (Egopt) is calculated from the absorption coefficient (α) values by Tauc’s extrapolation procedure. It has been found that the value of refractive index (n), real dielectric constant (ε’) and oscillator strength (Ed) increase while extinction coefficient (k), imaginary dielectric constant (ε” ), average energy gap (E0) and Egopt decrease as the In concentration increases. These results have been explained on the basis of phase transition which is taking place in InSe thin films..

Keywords

In-Se thin films, Chalcogenide glasses, Optical properties, Band gap.

Submitted at: July 3, 2007
Accepted at: Oct. 15, 2007

Citation

FALAH I MUSTAFA, AKSHAY KUMAR, N. GOYA, S. K. TRIPATHI, Effect of phase transition on the optical properties of InxSe1-x thin films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 10, pp. 3210-3214 (2007)

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