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Effect of Sn additive on the electrical properties of Se-Te glassy alloy

VINEET SHARMA1,*

Affiliation

  1. Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan- 173 215, India

Abstract

The changes in electrical conductivity on the incorporation of Sn additive in Se-Te binary alloy has been studied in the present work. The electrical measurements have been carried out on a-Se85-xTe15Snx (x = 0, 2, 4, 6 and 10 at. %) thin films. Dark conductivity (σd) increases upto x = 6 at. % and then decreases. Activation energy (∆Ed) decreases upto x = 2 at. % of Sn addition, but it increases on further Sn addition. Photoconductivity (σph) also following the same trend as the dark conductivity measurements. Photosensitivity (σph/σd) decreases sharply after the Sn incorporation. The charge carrier concentration (nσ) is calculated with the help of dc conductivity measurements. The value of nσ increases as the Sn concentration increases upto x = 6 at. % and then decreases as the concentration of Sn is increased. The results are explained on the basis of increase in the density of localized states present in the mobility gap and interms of the electron affinity values of the various constituents of the thin films..

Keywords

Photosensitivity, Localized states, Electron affinity, Hopping.

Submitted at: July 18, 2006
Accepted at: Sept. 13, 2006

Citation

VINEET SHARMA, Effect of Sn additive on the electrical properties of Se-Te glassy alloy, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 5, pp. 1823-1830 (2006)