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Effect of Sn incorporation in the density of defect states in a-Se thin film

N. SHARMA1, S. P. SINGH1, S. KUMAR1,*

Affiliation

  1. Department of Physics, Christ Church College, Kanpur-208001, India

Abstract

The present paper reports the d. c. conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of pure Se and Se9oSn10 glassy alloys. Current-Voltage (I-V) Characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E~104V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. The increase in DOS near Fermi level has been found which could be explained in terms of the electronegativity differences between the aforesaid two elements..

Keywords

Thin films, Chalcogenide glasses, SCLC, DOS.

Submitted at: April 30, 2007
Accepted at: July 15, 2007

Citation

N. SHARMA, S. P. SINGH, S. KUMAR, Effect of Sn incorporation in the density of defect states in a-Se thin film, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 7, pp. 2016-2018 (2007)