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Effects of annealing on excitonic properties of sputtered ZnO films at room temperature

BO HUANG1,2,* , GUANNAN HE3, HUIDONG YANG1,2

Affiliation

  1. Department of Electronic Engineering, Jinan University, GuangZhou 510632, China.
  2. State Key Lab of Silicon Materials, Zhejiang University, HangZhou 310027, China
  3. Physics Department, Zhongshan University, GuangZhou 510275, China.

Abstract

ZnO films have been deposited on quartz glasses by RF magnetron sputtering. The optical and structural properties of the ZnO films were studied. It was found that annealing the ZnO films in oxygen dramatically improved the optical properties. Excitonic absorption features were observed in the annealed ZnO films at room temperature. The excitonic absorption peaks were deconvoluted to three peaks, A-, B- and C-excitons resonance peaks. The stress inside the ZnO films changes those resonance peaks positions.

Keywords

Zinc oxide, Annealing, Exciton, XRD.

Submitted at: May 12, 2010
Accepted at: Nov. 25, 2010

Citation

BO HUANG, GUANNAN HE, HUIDONG YANG, Effects of annealing on excitonic properties of sputtered ZnO films at room temperature, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 12, pp. 2369-2372 (2010)