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Effects of annealing on the structural properties of GaAs-based quantum well solar cells

T. ASAR1, B. SARIKAVAK1,* , M. KEMAL ÖZTÜRK1, T. MAMMADOV1,2, S. ÖZÇELIK1

Affiliation

  1. Department of Physics, Gazi University, 06500 Teknikokullar Ankara, Turkey
  2. Azerbaijan National Science Akademy, Physics Institue. Baku Azerbaijan

Abstract

Ga1-x InxP and Inx Ga 1-xAs quantum well solar cells (QWSC) grown on (100) and (110) orientated GaAs substrates were prepared by Molecular Beam Epitaxy (MBE). The annealing effects on the structural properties of the QWSC were investigated by high resolution X-ray diffractometer (HRXRD). Primarily, in-plane and out of-plane lattice parameters were found with the analysis of XRD data. Parallel X-ray strain (εII), perpendicular X-ray strain (ε ⊥), misfit (εf ), alloy composition (x), tilt values and dislocations of the samples were carried out. Using the determined strain parameters, a dynamical theory based calculations for these structural properties have done by using increasing temperatures bringing out relaxation mechanism; interdiffusion and favored migration..

Keywords

Molecular beam epitaxy (MBE), Annealing, Defect anaysis, GaInP, InGaAs.

Submitted at: Sept. 6, 2009
Accepted at: Nov. 19, 2009

Citation

T. ASAR, B. SARIKAVAK, M. KEMAL ÖZTÜRK, T. MAMMADOV, S. ÖZÇELIK, Effects of annealing on the structural properties of GaAs-based quantum well solar cells, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 11, pp. 1627-1631 (2009)